Coherent manipulation of magnetization precession in ferromagnetic semiconductor (Ga,Mn)As with successive optical pumping

We report dynamic control of magnetization precession by light alone. A ferromagnetic (Ga,Mn)As epilayer was used for experiments. Amplitude of precession was modulated to a large extent by tuning the time interval between two successive optical pump pulses which induced torques on magnetization through a non-thermal process. Nonlinear effect in precession motion was also discussed.Comment: 3 pages, 4 figures, Submitted to AP

Photo-induced precession of magnetization in ferromagnetic (Ga,Mn)As

Precession of magnetization induced by pulsed optical excitation is observed in a ferromagnetic semiconductor (Ga,Mn)As by time-resolved magneto-optical measurements. It appears as complicated oscillations of polarization plane of linearly-polarized probe pulses, but is reproduced by gyromagnetic theory incorporating an impulsive change in an effective magnetic field due to changes in magnetic anisotropy. It is inferred from the shape of the impulse that the changes in anisotropy result from non-equilibrium carrier population: cooling of hot photo-carriers and subsequent annihilation of photo-carriers

Detection of spin voltaic effect in a p-n heterojunction

Model calculation and experimental data of circularly-polarized-light-dependent photocurrent in a n-AlGaAs/p-InGaAs/p-GaAs heterostructure are reported. It is found that, under the appropriate forward bias condition, spin voltaic effect (SVE) can survive across the heterojunction and give rise to detectable polarization-dependent photocurrent signals which are greater than the signals due to the magnetic circular dichroism. Our analysis suggests that SVE can be enhanced by optimization of layer thickness, doping profile, and applied bias, making SVE favorable for the realization of a semiconductor-based polarization detector, a spin-photodiode (spin-PD).Comment: 16 pages, 3figure

Effect of Ga+^{+} irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers

We report on the magnetic and magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As modified by Ga$^{+}$ ion irradiation using focused ion beam. A marked reduction in the conductivity and the Curie temperature is induced after the irradiation. Furthermore, an enhanced negative magnetoresistance (MR) and a change in the magnetization reversal process are also demonstrated at 4 K. Raman scattering spectra indicate a decrease in the concentration of hole carriers after the irradiation, and a possible origin of the change in the magnetic properties is discussed

Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction

We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 10^5 A/cm^2.Comment: 13 pages, 3 figure

Ion Irradiation Control of Ferromagnetism in (Ga,Mn)As

We report on a promising approach to the artificial modification of ferromagnetic properties in (Ga,Mn)As using a Ga$^+$ focused ion beam (FIB) technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic anisotropy and Curie temperature can be controlled using Ga$^+$ ion irradiation, originating from a change in hole concentration and the corresponding systematic variation in exchange interaction between Mn spins. This change in hole concentration is also verified using micro-Raman spectroscopy. We envisage that this approach offers a means of modifying the ferromagnetic properties of magnetic semiconductors on the micro- or nano-meter scale.Comment: 4 pages, 4 figures, to appear in Jpn. J. Appl. Phys. (Part 2 Letters

Ultrahigh field electron cyclotron resonance absorption in In1−x_{1-x}Mnx_xAs films

We have carried out an ultrahigh field cyclotron resonance study of $n$-type In$_{1-x}$Mn$_x$As films, with Mn composition $x$ ranging from 0 to 12%, grown on GaAs by low temperature molecular beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing $x$. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the {\em s-d} and {\em p-d} exchange coupling constants, $\alpha$ and $\beta$, for this important III-V dilute magnetic semiconductor system.Comment: 4 pages, 4 figure

Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systematically with concentrations of incorporated Mn atoms and holes for wide range of Mn concentration (10^17 ~ 10^21 cm^-3). Quantitative assessment of anomalous Hall effect at room temperature is also carried out for the first time.Comment: 8 pages, 4 figures, tabl